In-situ growth of SiC nanostructures and their influence on anti-oxidation capability of C/SiC composites

High purity SiC nanostructures were grown in situ on the surfaces of C/SiC composites by the chemical vapor reaction route to improve the anti-oxidation capability of C/SiC composites. It was found that the SiC nanostructures formed a dense cluster with a thickness of about 20 mu m. The nanostructures mainly included nanopartides and nanorods. The oxidation tests found that the SiC nanostructures could significantly improve the anti-oxidation capability of C/SiC composites, particularly, at the temperature beyond 900 degrees C. The improvement of the anti-oxidation capability of the C/SiC composites was attributed to the formation of a silica layer.