期刊
CHEMICAL SOCIETY REVIEWS
卷 46, 期 16, 页码 4855-4866出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7cs00080d
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资金
- Global-Foundries and Cornell Nanoscale Science and Technology (CNF)
- Cornell Center for Materials Research (CCMR)
- KAUST-Cornell Center of Energy and Sustainability (KAUST-CU)
Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.
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