期刊
ACS NANO
卷 11, 期 7, 页码 6652-6660出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b00638
关键词
hexagonal boron nitride; spectral diffusion; antibunching g-factor; 2D materials; color center; density functional theory
类别
资金
- National Science Foundation (NSF) [DMR-1506711, ECCS-MRI-1531237, EFRI-ACQUIRE-1641094]
- NSF Grant EFRI 2-DARE [EFRI-1542707]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1506711] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1531237] Funding Source: National Science Foundation
Hexagonal boron nitride (hBN) is an emerging material in nanophotonics and an attractive host for color centers for quantum photonic devices. Here, we show that optical emission from individual quantum emitters in hBN is spatially correlated with structural defects and can display ultranarrow zero-phonon line width down to 45 mu eV if spectral diffusion is effectively eliminated by proper surface passivation. We demonstrate that undesired emission into phonon sidebands is largely absent for this type of emitter. In addition, magneto-optical characterization reveals cycling optical transitions with an upper bound for the g-factor of 0.2 +/- 0.2. Spin-polarized density functional theory calculations predict possible commensurate transitions between like-spin electron states, which are in excellent agreement with the experimental nonmagnetic defect center emission. Our results constitute a step toward the realization of narrowband quantum light sources and the development of spin-photon interfaces within 2D materials for future chip-scale quantum networks.
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