期刊
APPLIED PHYSICS LETTERS
卷 111, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4999923
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资金
- Science and Technology Commission of Shanghai Municipality [16JC1400603]
- National Natural Science Foundation of China [61471126]
- Ministry of Science and Technology of Taiwan [MOST-103-2112-M-110-011-MY3]
Amorphous In-Ga-Zn-O thin-film transistors on flexible substrates were prepared to investigate H2O adsorption under negative bias stress (NBS). Shorter channel lengths induce a more seriously deteriorated NBS stability due to the stronger electric field near the source or drain electrode. With increasing channel width, the NBS instability increases to a peak and then slightly decreases. Integrated Systems Engineering Technology Computer-aided Design (ISE-TCAD) simulation confirms that the electric field near the source/drain in the etch-stop layer is relatively dense, especially near the channel edges. The electric field direction is also confirmed to have significant effects on the H2O adsorption process. Published by AIP Publishing.
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