期刊
APPLIED PHYSICS LETTERS
卷 111, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4992142
关键词
-
资金
- National Natural Science Foundation of China [51202057]
- Natural Science Foundation of Henan Province [162300410016]
- Key scientific research projects of Henan Province [17A140004]
Epitaxial BaTiO3/ZnO heterojunctions have been grown on a-plane Al2O3 by pulsed laser deposition. The out-of-plane and in-plane epitaxial relationships of BTO/ZnO/Al2O3 are determined to be (100)BTO//(0002)ZnO//(11 (2) over bar0) Al2O3 and [011](BTO)//[2 (1) over bar(1) over bar0](ZnO)//[0001]Al2O3, respectively. A threedomain- epitaxy growth mode was found to coexist in BaTiO3 films, while ZnO was a single domain epitaxially grown on a-Al2O3. A rectification effect was observed for the BTO films grown at high laser energies of 450 and 320 mJ, while bipolar resistive switching was found for those BTO films grown at low laser energies of 280 and 200 mJ. The transition from the rectification effect to the bipolar resistive switching effect can be understood by the variance of interface state density. Published by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据