期刊
CHEMISTRY OF MATERIALS
卷 29, 期 17, 页码 7431-7439出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.7b02407
关键词
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资金
- MURI ARO program [W911NF-11-1-0362]
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- FAME, one of six centers of STARnet, a Semiconductor Research Corporation program - DARPA
- Air Force Office of Scientific Research (AFOSR) [BAA-AFOSR-2013-0001]
- Center for Nanophase Materials Sciences (CNMS) - ORNL by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
- U.S. Depatlinent of Energy [DE-AC05-000R22725]
Transition metal dichalcogenide (TMD) alloys form a broad class of two-dimensional (2D) layered materials with tunable bandgaps leading to interesting optoelectronic applications. In the bottom-up approach of building these atomically thin materials, atomic doping plays a crucial role. Here we demonstrate a single step CVD (chemical vapor deposition) growth procedure for obtaining binary alloys and heterostructures by tuning atomic composition. We show that a minute doping of tin during the growth phase of the Mo1-xWxS2 alloy system leads to formation of lateral and vertical heterostructure growth. High angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging and density functional theory (DFT) calculations also support the modified stacking and growth mechanism due to the nonisomorphous Sn substitution. Our experiments possibility of growing heterostructures of TMD alloys whose spectral responses can be desirably tuned for various optoelectronic applications.
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