期刊
CURRENT APPLIED PHYSICS
卷 17, 期 10, 页码 1298-1302出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2017.06.014
关键词
GaN; Efficiency droop; Light-emitting diode; Quantum well
资金
- Pioneer Research Center Program through the National Research Foundation of Korea - Ministry of Science, ICT and Future Planning [2014M3C1A3052580]
- Basic Science Research Program through the National Research Foundation of Korea - Ministry of Education [2016R1D1A1B03932092]
- National Research Foundation of Korea [2016R1D1A1B03932092, 2014M3C1A3052580] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The efficiency droop of InGaN-based blue light-emitting diodes (LEDs) is analyzed using numerical simulations with a modified ABC carrier recombination model. The ABC model is modified to include the effect of reduced effective active volume of InGaN quantum wells (QWs) and incorporated into the numerical simulation program. It is found that the droop of internal quantum efficiency (IQE) can be well explained by the effect of reduced light-emitting active volume without assuming a large Auger recombination coefficient A simulated IQE curve with the modified ABC model is found to fit quite well with a measured efficiency curve of an InGaN LED sample when the effective active volume takes only 2.5% of the physical volume of QWs. The proposed numerical simulation model incorporating the reduced effective active volume can be advantageous for use in the modeling and simulation of InGaN LEDs for higher efficiency. (C) 2017 Elsevier B.V. All rights reserved.
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