期刊
ACTA MATERIALIA
卷 135, 期 -, 页码 372-381出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2017.06.029
关键词
Yb2Si2O7; Diffusion; Grain boundaries (GBs); Barrier layer
资金
- Council for Science, Technology and Innovation (CSTI)
- Cross-ministerial Strategic Innovation Promotion Program (SIP)
- Structural Materials for Innovation program of the Japan Science and Technology Agency (JST)
- Nanotechnology Platform of the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan [JP12024046]
To elucidate the mass transfer mechanism in polycrystalline Yb2Si2O7 at high temperatures, the oxygen permeability of Yb2Si2O7 wafers was evaluated under various oxygen potential gradients (d mu(o)) at temperatures up to 1673 K, using O-18(2). The O-18 was found to concentrate at grain boundaries (GBs), indicating that oxygen preferentially diffuses along the wafer GBs. It was also determined that oxygen permeation is controlled by the mutual GB diffusion of ytterbium and oxide ions, and that ytterbium and oxide ions interdiffuse along the GBs without experiencing any acceleration or retardation effects. The lattice and GB diffusion coefficients for oxygen were directly determined from secondary ion mass spectrometry (SIMS). The oxygen GB diffusion coefficients determined from SIMS-O-18 line profiles along cross-sections of individual GBs were almost the same as those obtained from SIMS-O-18 depth profiles. The oxygen GB diffusion coefficient under a d mu(o) was clearly smaller than that in the absence of a d mu(o) (representing self-diffusion data). This work also determined the electronic transference numbers for Yb2Si2O7 with and without the application of a d mu(o), on the basis of the oxygen GB diffusion coefficients predicted using oxygen permeation data. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据