4.5 Article

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

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IEEE PHOTONICS JOURNAL
卷 9, 期 3, 页码 -

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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2017.2692039

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Integrated optics materials; waveguides; mid infrared; photonic integrated circuits

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In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and r = 10 mu m bends with bending loss as low as 2 dB/cm and 0.02 dB/90 degrees in the broad wavelength range of 3.68-3.88 mu m. We also indicate the limitation of SOI waveguide loss in mid-infrared wavelength by analyzing loss mechanisms. Based on this high-performance mid-infrared waveguide, we systematically analyze the coupling efficiency of various directional couplers, which are critical and commonly used building blocks for on-chip light routing and power splitting. By varying coupling length and sweeping wavelength, the performance of directional coupler with various gap separations is meticulously investigated in 3.68-3.88 mu m. A experimental database for directional coupler with any power splitting ratio is provided. Our results offer a promising broadband platform for dense wavelength division multiplexing (DWDM) and applications that require precise control of coupling such as racetrack resonator in the mid-infrared region.

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