期刊
REVIEWS ON ADVANCED MATERIALS SCIENCE
卷 50, 期 1-2, 页码 69-75出版社
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资金
- French National Agency for Research (ANR) through the Program Science de l'ingenierie (Project DoGeTec) [ANR-12-JS09-0015-1]
- Agence Nationale de la Recherche (ANR) [ANR-12-JS09-0015] Funding Source: Agence Nationale de la Recherche (ANR)
Atomic transport in nano-crystals is still poorly studied experimentally. However, the knowledge of atomic transport kinetic and of the mechanisms allowing atoms to move in a volume exhibiting nano-scale dimensions (< 100 nm) is important for i) improving our fundamental knowledge concerning point defects' formation and migration energies, and atom-point defect interactions in nano-structures, as well as for ii) predicting mass transport in nano-structures, allowing the design of nano-structure fabrication processes to be developed at lower cost. In this article, atom probe tomography measurements were used to investigate the Ge distribution in 40 nm-wide Si nano-crystals in which the Ge flux was found to be ten times faster than in the bulk of a Si mono-crystal. The Ge atoms were found to be randomly distributed in the nano-crystals. No extended defect was found being able to explain an increase of Ge transport kinetic in the nano-crystals. Consequently, a scenario based on a higher equilibrium vacancy concentration at the nano-crystal surface (or interface) is proposed in order to explain the faster atomic kinetic measured in Si nano-crystals.
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