4.6 Article

Chemical etching of copper foils for single-layer graphene growth by chemical vapor deposition

期刊

CHEMICAL PHYSICS LETTERS
卷 685, 期 -, 页码 40-46

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2017.07.035

关键词

Chemical etching; Single-layer graphene; Chemical vapor deposition; Copper foil; Surface morphology

向作者/读者索取更多资源

Chemical etching on copper surface is essential as a pre-treatment for single-layer graphene growth by chemical vapor deposition (CVD). Here, we investigated the effect of chemical etching treatment on copper foils for single-layer graphene CVD growth. The chemical etching conditions, such as the type of chemical etchants and the treatment time, were found to strongly influence the graphene domain size. Moreover, a drastic change in the layer structure of graphene sheets, which was attributed to the surface morphology of the etched copper foil, was confirmed by graphene transmittance and Raman mapping measurements. (C) 2017 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据