期刊
APPLIED PHYSICS EXPRESS
卷 10, 期 10, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/APEX.10.101001
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资金
- Grants-in-Aid for Scientific Research [15K13963] Funding Source: KAKEN
Halide vapor phase epitaxy of thick GaN films was demonstrated on ScAlMgO4 (SCAM) substrates, and their self-separation was achieved. The 320-mu m-thick GaN film was self-separated from the SCAM substrate during the cooling process after the growth. This separation phenomenon occurred because of both the c-plane cleavability of SCAM and the difference in the thermal-expansion coefficients between GaN and SCAM. The dark-spot densities for the GaN films on the SCAM substrates were approximately 30% lower than those on sapphire substrates. These results indicate that SCAM substrates are promising for fabricating a high-quality freestanding GaN wafer at a low cost. (C) 2017 The Japan Society of Applied Physics
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