期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 39, 页码 34204-34212出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b08668
关键词
transition-metal dichalcogenides; two-dimensional material; chemical vapor deposition; heterostructure; substitution; optoelectronic devices
资金
- Youth 973 program [2015CB932700]
- National Key Research & Development Program [2016YFA0201902]
- National Natural Science Foundation of China [51290273, 91433107]
- ARC [DP140101501, FT150100450, CE170100039]
- Natural Science Foundation of Jiangsu Province [BK20150053]
- Department of Science and Technology of Jiangsu Province [BY2014059-03]
- MOST [106-2112-M-008-003-MY3]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
- Collaborative Innovation Center of Suzhou Nano Science and Technology
Lateral transition-metal dichalcogenide and their heterostructures have attracted substantial attention, but there lacks a simple approach to produce large-scaled optoelectronic devices with graded composition. In particular, the incorporation of substitution and doping into heterostructure formation is rarely reported. Here, we demonstrate growth of a composition graded doped lateral WSe2/WS2 heterostructure by ambient pressure chemical vapor deposition in a single heat cycle. Through Raman and photoluminescence spectroscopy, we demonstrate that the monolayer heterostructure exhibits a clear interface between two domains and a graded composition distribution in each domain. The coexistence of two distinct doping modes, i.e., interstitial and substitutional doping, was verified experimentally. A distinct three-stage growth mechanism consisting of nucleation, epitaxial growth, and substitution was proposed. Electrical transport measurements reveal that this lateral heterostructure has representative characteristics of a photodiodes. The optoelectronic device based on the lateral WSe2/WS2 heterostructure shows improved photodetection performance in terms of a reasonable responsivity and a large photoactive area.
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