4.8 Article

Self-Organization of Ions at the Interface between Graphene and Ionic Liquid DEME-TFSI

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 40, 页码 35437-35443

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b10912

关键词

self-organization; graphene field effect transistor; ionic liquid; interface; electrochemical effect

资金

  1. NASA [NNX13AD42A]
  2. ARO [W911NF-16-1-0029]
  3. NSF [NSF-DMR-1337737, NSF-DMR1508494, 1651381]
  4. Natural Science Foundation of China [51390472]
  5. National 973 projects of China [2015CB654903]
  6. China postdoctoral science Foundation [2015M582649]
  7. NSFC-NGC [61631166004]
  8. Fundamental Research Funds for the Central Universities
  9. ACS-PRF [55279-DNIS]
  10. Research Corporation for Science Advancement's Cottrell Scholar award funding
  11. Direct For Mathematical & Physical Scien
  12. Division Of Materials Research [1337737, 1508494] Funding Source: National Science Foundation
  13. Division Of Chemistry
  14. Direct For Mathematical & Physical Scien [1651381] Funding Source: National Science Foundation

向作者/读者索取更多资源

Electrochemical effects manifest as nonlinear responses to an applied electric field in electrochemical devices, and are linked intimately to the molecular orientation of ions in the electric double layer (EDL). Herein, we probe the origin of the electrochemical effect using a double-gate graphene field effect transistor (GFET) of ionic liquid N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis (trifluoromethylsulfonyl)imide (DEME-TFSI) top-gate, paired with a ferroelectric Ph0.92La0.08Zr0.52Ti0.48O3 (PLZT) back-gate of compatible gating efficiency. The orientation of the interfacial molecular ions can be extracted by measuring the GFET Dirac point shift, and their dynamic response to ultraviolet-visible light and a gate electric field was quantified. We have observed that the strong electrochemical effect is due to the TFSI anions self-organizing On a treated GFET surface. Moreover, a reversible order-disorder transition of TFSI anions self organized on the GFET surface can be triggered by illuminating the interface with ultraviolet-visible light, revealing that it is a useful method to control the surface ion configuration and the overall performance of the device.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据