期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 41, 页码 36130-36136出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b09713
关键词
short-wavelength infrared; black phosphorus; phototransistor; photodetector; electrostatic gating
资金
- National University of Singapore Faculty Research Committee [R-263-000-B21-133, R-263-000-B21-731]
- A*STAR Science and Engineering Research Council [152-70-00013]
- National Research Foundation [NRF-CRP15-2015-01, NRF-CRP15-2015-02]
- National Research Foundation, Prime Minister's Office, Singapore under medium-sized centre program
The narrow band gap property of black phosphorus (BP) that bridges the energy gap between graphene and transition metal dichalcogenides holds great promise for enabling broadband optical detection from ultraviolet to infrared wavelengths. Despite its rich potential as an intriguing building block for optoelectronic applications, however, very little progress has been made in realizing BP-based infrared photodetectors. Here, we demonstrate a high sensitivity BP phototransistor that operates at a short-wavelength infrared (SWIR) of 2 mu m under room temperature. Excellent tunability of responsivity and photoconductive gain are acquired by utilizing the electrostatic gating effect, which controls the dominant photocurrent generation mechanism via adjusting the band alignment in the phototransistor. Under a nanowatt-level illumination, a peak responsivity of 8.5 A/W and a low noise equivalent power (NEP) of less than 1 pW/Hz(1/2) are achieved at a small operating source-drain bias of -1 V. Our phototransistor demonstrates a simple and effective approach to continuously tune the detection capability of BP photodetectors, paving the way to exploit BP to numerous low-light-level detection applications such as biomolecular sensing, meteorological data collection, and thermal imaging.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据