期刊
CRYSTENGCOMM
卷 19, 期 39, 页码 5849-5856出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ce01064h
关键词
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资金
- National Key Research and Development Program [2016YFB04000803, 2016YFB04000802]
- National Natural Sciences Foundation of China [61376047, 61527814, 61674147, 61376090, 61204053]
- Beijing Municipal Science and Technology Project [D161100002516002]
- National High Technology Program of China [2014AA032608, 2011AA03A111]
- National 1000 Young Talents Program
- Youth Innovation Promotion Association CAS
The growth mechanism of AlN materials on a sapphire substrate with a hexagonal BN overlayer (hBN/sapphire) by metal-organic chemical vapor deposition (MOCVD) is reported for the first time. Here, we have grown high-quality AlN films on sapphire with a hBN layer by MOCVD. A growth model has been proposed to clarify the growth mechanism of AlN on hBN. To facilitate the nucleation of AlN on hBN/sapphire, we have introduced some artificial dangling bonds for hBN through O-2 plasma treatment (hBN-O-2). The change in atom connective structure of hBN materials after the treatment has been inferred according to the results of Raman spectroscopy and X-ray photoelectron spectroscopy. The total dislocation density of AlN on hBN-O-2/sapphire is much lower than that of AlN on hBN/sapphire, which has evidenced the high crystalline quality of epitaxial films and the effect of the O-2 treatment. Moreover, an AlGaN-based deep-ultraviolet light emitting diode (DUV LED) structure on hBN-O-2/sapphire was achieved. The electroluminescence results have exhibited strong emissions with a peak wavelength of 290 nm, which further confirms the high quality of the AlN. This work provides a possible solution for further developing efficient DUV LEDs on 2D materials as well as other unconventional substrates.
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