期刊
APPLIED SURFACE SCIENCE
卷 420, 期 -, 页码 802-807出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2017.05.241
关键词
Gallium oxide; MOCVD; Competitive growth; Structural evolution
类别
资金
- National Natural Science Foundation of China [51402366, 61204091, 61404177, U1201254]
- Science and Technology Project of Guangdong Province, China [2015B010132006, 2016B090918106]
Gallium oxide thin films of beta and epsilon phase were grown on c-plane sapphire using metal-organic chemical vapor deposition and the phase compositions were analyzed using X-ray diffraction. The epitaxial phase diagram was constructed as a function of the growth temperature and VI/III ratio. A low growth temperature and low VI/III ratio were beneficial for the formation of hexagonal-type epsilon-Ga2O3. Further structure analysis revealed that the epitaxial relationship between epsilon-Ga2O3 and c-plane sapphire is epsilon-Ga2O3 (0001) parallel to Al2O3 (0001) and epsilon-Ga2O3 parallel to Al2O3. The structural evolution of the mixed-phase sample during film thickening was investigated. By reducing the growth rate, the film evolved from a mixed phase to the energetically favored epsilon phase. Based on these results, a Ga2O3 thin film with a phase-pure epsilon-Ga2O3 upper layer was successfully obtained. (C) 2017 Elsevier B.V. All rights reserved.
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