High-order-harmonic generation of a doped semiconductor

We investigate the high-order-harmonic generation (HHG) in doped semiconductors. The HHG is simulated with the single-electron time-dependent Schrodinger equation. The results show that the high-order harmonics in the second plateau generated from the doped semiconductors is about one to three orders of magnitude higher than those from the undoped semiconductor. The results are explained based on the analysis of the energy-band structure and the time-dependent population imaging. Our paper indicates that doping can effectively control the HHG in semiconductors.