4.4 Article

Rectifying electronic transport and the role of Fowler-Nordheim tunneling in Ag/PVDF/Au capacitor structures

期刊

CURRENT APPLIED PHYSICS
卷 17, 期 11, 页码 1469-1475

出版社

ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2017.08.012

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PVDF thin film; Electronic transport; SCLC; FN tunneling; Rectifying I-V

资金

  1. UGC [F.14-2(SC)/2010(SA-III)]

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The electron transport through beta phase dominant Polyvinylidene fluoride ( PVDF) thin films in its intrinsic form is investigated and reports the stable rectification up to +/- 30 V in Ag/PVDF/Au capacitor structures. A practical resistance ratio of similar to 40 between -1 V and 1 V and a maximum ratio of similar to 77 at -24 V and 24 V exhibits its potential usage in selector devices. Furthermore, the nonpolar electronic transport is analysed with Schottky, Space Charge Limited Current (SCLC), Poole-Frenkel (PF) and Fowler-Nordheim (FN) tunneling mechanisms with respect to electrode, thickness and temperature variations. (C) 2017 Elsevier B.V. All rights reserved.

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