期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 50, 期 41, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aa837c
关键词
van der Waals heterobilayers; arsenene/Ca(OH)(2); type-I band alignment; multi-functional devices
资金
- National Natural Science Foundation of China [11674084, 61622406, 11674310, 61571415, 51502283]
- Henan Natural Science Foundation [162300410169]
- High Performance Computing Center of Henan Normal University
van der Waals heterobilayers have been considered to be an ideal option to enhance the electronic properties of original two-dimensional (2D) materials. We predicate theoretically that the 2D arsenene/Ca(OH)(2) heterobilayers possess the characteristics of the indirect gap of 2.28 eV and type-I band alignment. Moreover, the electric field can induce the indirect-direct band gap transition of arsenene/Ca(OH)(2) heterobilayers. Interestingly, the band alignment transition from type-I to type-II and type-III can be also tailored using the strength and direction of the electric field. These results provide the possibility of realizing the 2D materials-based multi-functional optoelectronic devices by applying electrostatic gating.
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