期刊
APPLIED PHYSICS LETTERS
卷 111, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4998639
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资金
- Laboratory Directed Research and Development Program at Sandia National Laboratories
- U.S. Department of Energy's National Nuclear Security Administration [DE-NA-0003525]
We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process. Published by AIP Publishing.
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