期刊
ADVANCED MATERIALS
卷 29, 期 41, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201702931
关键词
edge contact; semiconductor-metal boundary; scanning tunneling microscopy (STM); transition-metal dichalcogenides
类别
资金
- Global Research Laboratory (GRL) Program [2016K1A1A2912707]
- Basic Science Research Program of the National Research Foundation of Korea [2017R1A2A2A05001403]
- National Research Foundation of Korea [2017R1A2A2A05001403] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Despite recent efforts for the development of transition-metal-dichalcogenide-based high-performance thin-film transistors, device performance has not improved much, mainly because of the high contact resistance at the interface between the 2D semiconductor and the metal electrode. Edge contact has been proposed for the fabrication of a high-quality electrical contact; however, the complete electronic properties for the contact resistance have not been elucidated in detail. Using the scanning tunneling microscopy/spectroscopy and scanning transmission electron microscopy techniques, the edge contact, as well as the lateral boundary between the 2D semiconducting layer and the metalized interfacial layer, are investigated, and their electronic properties and the energy band profile across the boundary are shown. The results demonstrate a possible mechanism for the formation of an ohmic contact in homojunctions of the transition-metal dichalcogenides semiconductor-metal layers and suggest a new device scheme utilizing the low-resistance edge contact.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据