期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 39, 页码 34416-34422出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b08961
关键词
GaN-on-diamond devices; thermal boundary resistance; thermal conductivity; transient thermoreflectance; interfacial microstructure
资金
- DARPA [FA8650-15-C-7517]
- Engineering and Physical Sciences Research Council (EPSRC) [EP/P00945X/1]
- EPSRC [EP/P00945X/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/P00945X/1] Funding Source: researchfish
GaN-on-diamond device cooling can be enhanced by reducing the effective thermal boundary resistance (TBReff) of the GaN/diamond interface. The thermal properties of this interface and of the polycrystalline diamond grown onto GaN using SiN and AlN barrier layers as well as without any barrier layer under different growth conditions are investigated and systematically compared for the first time. TBReff values are correlated with transmission electron microscopy analysis, showing that the lowest reported TBReff (similar to 6.5 m(2) K/GW) is obtained by using ultrathin SiN barrier layers with a smooth interface formed, whereas the direct growth of diamond onto GaN results in one to two orders of magnitude higher TBReff due to the formation of a rough interface. AlN barrier layers can produce a TBReff as low as SiN barrier layers in some cases; however, their TBReff are rather dependent on growth conditions. We also observe a decreasing diamond thermal resistance with increasing growth temperature.
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