期刊
ULTRAMICROSCOPY
卷 180, 期 -, 页码 34-40出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ultramic.2017.03.002
关键词
Aberration correction; EELS; HAADF; Misfit dislocations; Dislocation structure; Phonon
类别
资金
- U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0005132]
- U.S. Department of Energy (DOE) [DE-SC0005132] Funding Source: U.S. Department of Energy (DOE)
The success of aberration correction techniques at the end of the 20th century came at a time of increasing need for atomic resolution imaging to better understand known structural defects that influence semiconductor device operation, and to advance the search for new structures and behavior that will form the basis for devices in the future. With this in mind, it is a pleasure to recognize the contributions of Ondrej Krivanek to the success of aberration correction techniques, and his extension of aberration techniques to EELS equipment that further promises to unite structural studies with characterization of behavior from meV to keV energies in the STEM. (C) 2017 Elsevier B.V. All rights reserved.
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