期刊
APPLIED PHYSICS LETTERS
卷 111, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5001790
关键词
-
资金
- National Natural Science Foundation of China [11335006]
- Fok Ying Tung Education Foundation
- China Scholarship Council (CSC)
We grow high-quality two-dimensional hexagonal boron nitride (h-BN) films on copper pockets by chemical vapor deposition. A piece of sapphire embedded in the pocket serves as an oxygen supply during the growth process. To obtain clean h-BN films, source powders are placed in a U-shaped quartz tube and heated up in a water bath without the carrier-gas flow. These films are characterized by using SEM, Raman, XPS, and selected area electron diffraction analyses. As dielectric substrates, h-BN films significantly enhance the charge-carrier mobility of graphene transistors. This facile and robust method can be a scalable approach to synthesize large-area high-quality h-BN films for related electronic applications. Published by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据