4.8 Article

Surface State Density Determines the Energy Level Alignment at Hybrid Perovskite/Electron Acceptors Interfaces

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 47, 页码 41546-41552

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b12586

关键词

halide perovskite (CH3NH3PbI3-xClx) films; CH3NH3PbI3 single crystals; X-ray and ultraviolet photoelectron spectroscopy; density of surface states; energy level alignment

资金

  1. Helmholtz Energy Alliance Hybrid Photovoltaics
  2. Joint Graduate School HyPerCells of the University of Potsdam
  3. Helmholtz Zentrum Berlin
  4. DFG [Sfb951, AM 419/1-1]

向作者/读者索取更多资源

Substantial variations in the electronic structure and thus possibly conflicting energetics at interfaces between hybrid perovskites and charge transport layers in solar cells have been reported by the research community. In an attempt to unravel the origin of these variations and enable reliable device design, we demonstrate that donor-like surface states stemming from reduced lead (Pb-0) directly impact the energy level alignment at perovskite (CH3NH3PbI3-xClx) and molecular electron acceptor layer interfaces using photoelectron spectroscopy. When forming the interfaces, it is found that electron transfer from surface states to acceptor molecules occurs, leading to a strong decrease in the density of ionized surface states. As a consequence, for perovskite samples with low surface state density, the initial band bending at the pristine perovskite surface can be flattened upon interface formation. In contrast, for perovskites with a high surface state density, the Fermi level is strongly pinned at the conduction band edge, and only minor changes in surface band bending are observed upon acceptor deposition. Consequently, depending on the initial perovskite surface state density, very different interface energy level alignment situations (variations over 0.5 eV) are demonstrated and rationalized. Our findings help explain the rather dissimilar reported energy levels at interfaces with perovskites, refining our understanding of the operating principles in devices comprising this material.

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