期刊
SOLAR RRL
卷 1, 期 12, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.201700154
关键词
passivating contacts; Si heterojunction solar cells; thermal oxidation; titanium oxide
资金
- Major State Basic Research Development Program of China [2016YFB0700700]
- Zhejiang Provincial Natural Science Foundation [LR16F040002]
- National Natural Science Foundation of China [61674154, 61404144]
- Major Project and Key S&T Program of Ningbo [2016B10004]
- International S&T Cooperation Program of Ningbo [2015D10021]
Crystalline silicon (c-Si) heterojunction solar cells featuring dopant-free and carrier-selective contacts have drawn considerable attention due to their potential in achieving high efficiency with extremely simple fabrication procedures. Here, a low-temperature thermal oxidation process is developed to fabricate a titanium dioxide (TiO2) ultrathin layer directly from a titanium (Ti) film that was predeposited onto Si substrates, leading to a surface recombination velocity as low as 15cms(-1). Detailed interfacial and structural characterizations show that the excellent contact passivation property was mainly attributed to the amorphous nature of TiO2 and the presence of a Ti-contained SiOx interlayer. By applying this ultrathin TiO2 layer as a passivating-contact layer, test heterojunction solar cells employing a core structure of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/n-Si/TiO2 obtained an efficiency as high as 14.6% (only 13.0% for the reference device), demonstrating the potential for applications of this thermal oxidation-derived TiO2 layer in dopant-free heterojunction solar cells.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据