期刊
CRYSTAL GROWTH & DESIGN
卷 17, 期 12, 页码 6297-6302出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.7b00983
关键词
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资金
- European Union [641023]
- Marie Curie Program MODES [4026]
- Swiss National Science Foundation [200021_156746]
- Swiss National Science Foundation (SNF) [200021_156746] Funding Source: Swiss National Science Foundation (SNF)
We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.
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