期刊
MATERIALS TODAY PHYSICS
卷 3, 期 -, 页码 118-126出版社
ELSEVIER
DOI: 10.1016/j.mtphys.2017.10.002
关键词
Wide band gap semiconductor; Beta-Ga2O3; Electrical properties; Hole conductivity; Thermodynamic calculations
资金
- Fondo Europeo de Desarrollo Regional [ENE2015-74275-JIN]
- Spanish MINECO through the Severo Ochoa Centers of Excellence Program [SEV-2013-0295]
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG beta-Ga2O3. Hole conduction, established by Hall and Seebeck measurements, is consistent with findings from photoemission and cathodoluminescence spectroscopies. The ionization energy of the acceptor level was measured to be 1.1eV above the valence band edge. The gallium vacancy was identified as a possible acceptor candidate based on thermodynamic equilibrium Ga2O3 (crystal) - O-2 (gas) system calculations (Kroger theory) which revealed a window without oxygen vacancy compensation. The possibility of fabricating large diameter wafers of beta-Ga2O3 of p and n type nature, provides new avenues for high power and deep UV-optoelectronic devices. (C) 2017 Elsevier Ltd. All rights reserved.
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