期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 48, 页码 42149-42155出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b15288
关键词
van der Waals heterostructure; type-II band alignment; dissimilar material systems; rectification; self-power photocurrent
资金
- National Natural Science Foundations of China (NSFC) [51331001, 51672023, U1530401]
- National Natural Science Foundation of China (NSFC) [51602014]
- Fundamental Research Funds for the Central Universities [50100002017101022]
van der Waals heterojunctions formed by stacking various two-dimensional (2D) materials have a series of attractive physical properties, thus offering an ideal platform for versatile electronic and optoelectronic applications. Here, we report few-layer SnSe/MoS2 van der Waals heterojunctions and study their electrical and optoelectronic characteristics. The new heterojunctions present excellent electrical transport characteristics with a distinct rectification effect and a high current on/off ratio (similar to 1 x 10(5)). Such type-II heterostructures also generate a self-powered photocurrent with a fast response time (<10 ms) and exhibit high photoresponsivity of 100 A W-1, together with high external quantum efficiency of 23.3 x 10(3)% under illumination by 532 nm light. Photoswitching characteristics of the heterojunctions can be modulated by bias voltage, light wavelength, and power density. The designed novel type-II van der Waals heterojunctions are formed from a combination of a transition-metal dichalcogenide and a group IV-VI layered 2D material, thereby expanding the library of ultrathin flexible 2D semiconducting devices.
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