期刊
PHYSICAL REVIEW B
卷 96, 期 15, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.96.155431
关键词
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资金
- [JP25110005]
- [JP26102017]
- [JP2511008]
- [JP17K19047]
- [JP16H03863]
- [JP15H03561]
- [JP17H05215]
- [PI-2016-1-0027]
- Grants-in-Aid for Scientific Research [17K19047, 25110005, 17H05215, 16H00953, 16H06361, 26102017, 16H03863] Funding Source: KAKEN
Epitaxial graphene on SiC that provideswafer-scale and high-quality graphene sheets on an insulating substrate is a promising material to realize graphene-based nanodevices. The presence of the insulating substrate changes the physical properties of free-standing graphene through the interfacial phonon, e.g., limiting the mobility. Despite such known impacts on the material properties, a complete and microscopic picture is missing. Here, we report on atomically resolved inelastic electron tunneling spectroscopy (IETS) with a scanning tunneling microscope for epitaxial graphene grown on 4H-SiC(0001). Our data reveal a strong spatial dependence in the IETS spectrum, which cannot be explained by intrinsic graphene properties. We show that this variation in the IETS spectrum originates from a localized low-energy vibration of the interfacial Si atom with a dangling bond via ab initio electronic and phononic state calculations. This insight may help advancing graphene device performance through interfacial control.
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