Ultrahigh sensitive temperature sensor based on graphene-semiconductor metamaterial

In this paper, we theoretically describe a nanoscale THz metamaterial, consisting of a graphene H-shaped that is located on an indium antimonide (InSb) substrate. This metamaterial in its simulated transmission spectrum exhibits a filtering effect and at a specific frequency, the percentage of light passing through the metamaterial is greatly reduced. Since the optical properties of graphene and InSb strongly depend on temperature, as the temperature changes, the frequency of resonance is also shifted. Thus we can expect our structure is suitable for ultrahigh sensitive temperature sensors. The temperature sensor presented is very sensitive with a sensitivity of 1814 nm/degrees C which is very high compared to other designed structures. This THz temperature sensor can play an important role for high-accurate temperature measurements.