期刊
ADVANCED FUNCTIONAL MATERIALS
卷 27, 期 47, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201703448
关键词
graphene; photodetectors; Schottky barriers; transition metal dichalcogenides; WS2
类别
资金
- JSPS KAKENHI grant [JP15H03530, JP16H0091, JP17K19036]
- PRESTO-JST [JPMJPR1322-13417571]
- MEXT scholarship
- Grants-in-Aid for Scientific Research [15H03530, 17K19036, 16H00917] Funding Source: KAKEN
The electrical contact is one of the main issues preventing semiconducting 2D materials to fulfill their potential in electronic and optoelectronic devices. To overcome this problem, a new approach is developed here that uses chemical vapor deposition grown multilayer graphene (MLG) sheets as flexible electrodes for WS2 field-effect transistors. The gate-tunable Fermi level, van der Waals interaction with the WS2, and the high electrical conductivity of MLG significantly improve the overall performance of the devices. The carrier mobility of single-layer WS2 increases about a tenfold (50 cm(2) V-1 s(-1) at room temperature) by replacing conventional Ti/Au metal electrodes (5 cm(2) V-1 s(-1)) with the MLG electrodes. Further, by replacing the conventional SiO2 substrate with a thin (1 mu m) parylene-C flexible film as insulator, flexible WS2 photodetectors that are able to sustain multiple bending stress tests without significant performance degradation are realized. The flexible photodetectors exhibited extraordinarily high gate-tunable photoresponsivities, reaching values of 4500 A W-1, and with very short (<2 ms) response time. The work of the heterostacked structure combining WS2, graphene, and the very thin polymer film will find applications in various flexible electronics, such as wearable high-performance optoelectronics devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据