4.8 Article

Mixed-Dimensional 1D ZnO-2D WSe2 van der Waals Heterojunction Device for Photosensors

期刊

ADVANCED FUNCTIONAL MATERIALS
卷 27, 期 47, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201703822

关键词

1D ZnO; 2D WSe2; imagers; mixed-dimensional van der Waals heterojunctions; photodetectors

资金

  1. Korea Institute of Science and Technology (KIST) Institution Program [2E27150, 2E27160]
  2. National Research Foundation of Korea (NRF) [2017R1A2B2005640]
  3. Cross-Ministry Giga KOREA Project of the Ministry of Science, ICT and Future Planning, Republic of Korea [GK17D0100]
  4. NRF (NRL program) [2017R1A2A1A05001278]
  5. NRF (SRC program) [2017R1A5A1014862]
  6. NRF (vdWMRC center)
  7. Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [GK17D0100] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  8. Ministry of Science & ICT (MSIT), Republic of Korea [2E27150] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  9. National Research Foundation of Korea [2017R1A5A1014862, 2017R1A2A1A05001278, 2017R1A2B2005640] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

2D layered van der Waals (vdW) atomic crystals are an emerging class of new materials that are receiving increasing attention owing to their unique properties. In particular, the dangling-bond-free surface of 2D materials enables integration of differently dimensioned materials into mixed-dimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale electronic/optoelectronic applications. This study presents a 1D ZnO nanowire (n-type)-2D WSe2 nanosheet (p-type) vdW heterojunction diode for photodetection and imaging process. After amorphous fluoro-polymer passivation, the ZnO-WSe2 diode shows superior performance with a much-enhanced rectification (ON/OFF) ratio of over 106 and an ideality factor of 3.4-3.6 due to the carbon-fluorine (C-F) dipole effect. This heterojunction device exhibits spectral photoresponses from ultraviolet (400 nm) to near infrared (950 nm). Furthermore, a prototype visible imager is demonstrated using the ZnO-WSe2 heterojunction diode as an imaging pixel. To the best of our knowledge, this is the first demonstration of an optoelectronic device based on a 1D-2D hybrid vdW heterojunction. This approach using a 1D ZnO-2D WSe2 heterojunction paves the way for the further development of electronic/optoelectronic applications using mixed-dimensional vdW heterostructures.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据