期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 50, 页码 43614-43622出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b12564
关键词
water splitting; protection layer; ALD; TiO2; flat band potential; leakage current
资金
- University of Zurich
- University Research Priority Program (URPP) LightChEC
- Swiss National Science foundation [PYAPP2 160586]
- Swiss National Science Foundation (SNF) [PYAPP2_160586] Funding Source: Swiss National Science Foundation (SNF)
Protective overlayers for light absorbers in photoelectrochemical water-splitting devices have gained considerable attention in recent years. They stabilize light absorbers which would normally be prone to chemical side reactions leading to degradation of the absorber. Atomic layer deposition (ALD) enables conformal and reproducible ultrathin protective layer growth even on highly structured substrates. One of the most widely investigated protective layers is amorphous TiO2, deposited by ALD at a relatively low temperature (120-150 degrees C). We have deposited protective layers from tetrakis(dimethylamido)titanium(IV) at two different temperatures and investigated their chemical composition as well as optical and electrochemical properties. Our main findings reveal a change in the flat band potential with thickness, reaching a stable value of about -50 to -100 mV versus reversible hydrogen electrode for films >30 nm, with doping densities of similar to 10(20) cm(3). Practical thicknesses to achieve pinhole-free films are evaluated and discussed.
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