4.4 Article Proceedings Paper

High-efficiency Cu(In,Ga)Se2 solar cells

期刊

THIN SOLID FILMS
卷 633, 期 -, 页码 13-17

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2016.08.021

关键词

Copper indium gallium selenide; Solar cells; Device efficiency; Device simulation; Buffer layers; Resistive layers

资金

  1. ZSW MAT team
  2. German Federal Ministry of Economics and Technology (BMWi) under CISEffTec [0329585G]
  3. Ministry of Finance and Economics Baden-Wurttemberg (KaliTan)
  4. German Federal Ministry of Economics and Technology (BMWi) under CISProTec [0325715]

向作者/读者索取更多资源

Recent progress in the development of high-efficiency solar cells based on Cu(In,Ga)Se-2 at our institute is reviewed. The post-deposition treatment with alkali elements (PDT) has been found to improve device quality, mostly through reduced recombination, with the effect of increasing the open-circuit voltage. At the same time, PDT is shown to improve initial growth properties of the chemical-bath-deposited buffer layer, so that this layer may be made thinner and the corresponding losses are reduced. Further optimization by replacing the non-doped ZnO resistive layer by (Zn,Mg)O enables gains in photocurrent for the ultraviolet region. A certified efficiency of 22.0% with a CdS/(Zn,Mg)O buffer/resistive layer combination is presented here. Furthermore, the effect of band gap grading with gallium in the absorber layer is explored with respect to the buffer layer properties by means of device simulation. (C) 2016 Elsevier B.V. All rights reserved.

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