期刊
THIN SOLID FILMS
卷 633, 期 -, 页码 222-226出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2016.09.038
关键词
Dopant concentration; Chalcopyrite; Capacitance-voltage; Hall; Polycrystalline
We compare the dopant concentration of polycrystalline Cu(ln,Ga)Se-2 thin film absorbers derived from Hall and capacitance-voltage measurements. Although both measurements techniques appear to be reliable, dopant concentrations determined by capacitance-voltage analysis are significantly lower and vary with probing depth into the absorber. The doping profiles and differences between both measurement techniques are consistent with Cd in-diffusion from the CdS buffer layer during solar cell fabrication. Different doping profiles obtained after a variation of the CdS deposition process support this scenario. (C) 2016 Elsevier B.V. All rights reserved.
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