期刊
CHEMISTRY OF MATERIALS
卷 29, 期 24, 页码 10426-10435出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.7b04023
关键词
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资金
- Nano mission, DST [SR/NM/TP-25/2016]
- SERB [EMR/2016/000651]
- TRC-project in JNCASR [TRC-JNC/KB/4396]
- IKST
- J C Bose National Fellowship of the DST
Complementary and beneficial effects of Sb and Bi codoping in GeTe are shown to generate high thermoelectric figure of merit, zT, of 1.8 at 725 K in Ge1-x-yBixSbyTe samples. Sb and Bi codoping in GeTe facilitates the valence band convergence enhancing the Seebeck coefficient as supported by density functional theoretical (DFT) calculations. Further, Sb and Bi codoping in GeTe releases the rhombohedral strain and increases its tendency to be cubic in structure, which ultimately enhances the valence band degeneracy. At the same time, Bi forms nanoprecipitates of size similar to 5-20 nm in GeTe matrix and Sb doping increases solid solution point defects greatly, which altogether scatter low-to mid wavelength phonons and result in reduced lattice thermal conductivity down to 0.5 W/mK in the 300-750 K range.
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