期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 48, 页码 41863-41870出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b12886
关键词
photovoltaics; transition metal oxides; selective contact; heterojunction; ultrathin solar cell; crystalline silicon; interface characterization
资金
- Bay Area Photovoltaic Consortium (BAPVC)
- Solar Energy Research Institute of India and US (SERIIUS)
- National Science Foundation (NSF) EFRI 2-DARE grant [1542883]
- Stanford Graduate Fellowship
- NSF [DGE-114747]
- National Science Foundation [ECCS-1542152]
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1542883] Funding Source: National Science Foundation
In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin crystalline silicon (c-Si) solar cells is demonstrated which results in an similar to 13% relative improvement in efficiency. The improvement in efficiency originates from the suppression of the contact recombination current due to the band offset asymmetry of these oxides with Si. First, an ultrathin c-Si solar cell having a total thickness of 2 mu m is shown to have >10% efficiency without any light-trapping scheme. This is achieved by the integration of nickel oxide (NiOx) as a hole-selective contact interlayer material, which has a low valence band offset and high conduction band offset with Si. Second, we show a champion cell efficiency of 10.8% with the additional integration of titanium oxide (TiOx), a well-known material for an electron-selective contact interlayer. Key parameters including V-oc and J(sc) also show different degrees of enhancement if single (NiOx only) or double (both NiOx and TiOx) carrier-selective contacts are integrated. The fabrication process for TiOx and NiOx layer integration is scalable and shows good compatibility with the device.
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