4.8 Article

Improvement of Transparent Conducting Performance on Oxygen Activated Fluorine-Doped Tin Oxide Electrodes Formed by Horizontal Ultrasonic Spray Pyrolysis Deposition

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 51, 页码 44584-44592

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b12968

关键词

transparent conducting electrode; fluorine-doped tin oxide; oxygen activation; film structures; horizontal ultrasonic spray pyrolysis deposition; photovoltaic performance

资金

  1. Ministry of Knowledge Economy (MKE) [10041161]
  2. Fundamental R&D Program for Core Technology of Materials - Ministry of Knowledge Economy, Republic of Korea

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In this study, highly transparent conducting fluorine-doped tin oxide (FTO) electrodes were fabricated using the horizontal ultrasonic spray pyrolysis deposition. In order to improve their transparent conducting performances, we carried out oxygen activation by adjusting the ratio of O-2/(O-2+N-2) in the carrier gas (0%, 20%, and 50%) used during the deposition process. The oxygen activation on the FTO electrodes accelerated the substitution concentration of F (F-O(center dot)) into the oxygen sites in the FTO electrode while the oxygen vacancy (V-O(center dot center dot)) concentration was reduced. In addition, due to growth of pyramid-shaped crystallites with (200) preferred orientations, this oxygen activation caused the formation of a uniform surface structure. As a result, compared to others, the FTO electrode prepared at 50% O-2 showed excellent electrical and optical properties (sheet resistance of similar to 4.0 +/- 0.14 Omega/square, optical transmittance of similar to 85.3%, and figure of merit of similar to 5.09 +/- 0.19 x 10(-2) O-1). This led to a superb photoconversion efficiency (similar to 7.03 +/- 0.20%) as a result of the improved short-circuit current density. The photovoltaic performance improvement can be defined by the decreased sheet resistance of FTO used as a transparent conducting electrode in dye-sensitized solar cells (DSSCs), which is due to the combined effect of the high carrier concentration by the improved F-O(center dot) concentration on the FTO electrodes and the fasted Hall mobility by the formation of a uniform FTO surface structure and distortion relaxation on the FTO lattices resulting from the reduced V-O(center dot center dot center dot) concentration.

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