期刊
ACS APPLIED MATERIALS & INTERFACES
卷 9, 期 51, 页码 44695-44703出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b13506
关键词
polymer nanoparticles; quantum dots; core-shell nanoparticles; donor-acceptor nanoensembles; energy conversion
资金
- European Union [642742]
- Spanish MINECO [ENE2016-79282-C5-1-R, MAT2016-79776-P]
- European Regional Development Fund
- Government of Aragon [DGA-T66, DGA-E26]
- European Social Fund
The self-assembly of novel core-shell nanoensembles consisting of regioregular poly(3-hexylthiophene) nanoparticles (P3HT(NPs)) of 100 nm as core and semiconducting CdTe quantum dots (CdTeQDs) as shell with a thickness of a few tens of nanometers was accomplished by employing a reprecipitation approach. The structure, morphology, and composition of CdTeQDs/P3HT(NPs) nanoensembles were confirmed by high-resolution scanning transmission microscopy and dynamic light-scattering studies. Intimate interface contact between the CdTeQDs shell and the P3HT(NPs) core leads to the stabilization of the CdTeQDs/P3HT(NPs) nanoensemble as probed by the steady-state absorption spectroscopy. Effective quenching of the characteristic photoluminescence of CdTeQDs at 555 nm, accompanied by simultaneous increase in emission of P3HT(NPs) at 660 and 720 nm, reveals photoinduced charge-transfer processes. Probing the redox properties of films of CdTeQDs/P3HT(NPs) further proves the formation of a stabilized core-shell system in the solid state. Photoelectrochemical assays on CdTeQDs/P3HT(NPs) films show a reversible on-off photoresponse at a bias voltage of +0.8 V with a 3 times increased photocurrent compared to CdTeQDs. The improved charge separation is directly related to the unique core-shell configuration, in which the outer CdTeQDs shell forces the P3HT(NPs) core to effectively act as electron acceptor. The creation of novel donor-acceptor core-shell hybrid materials via self-assembly is transferable to other types of conjugated polymers and semiconducting nanoparticles. This work, therefore, opens new pathways for the design of improved optoelectronic devices.
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