期刊
ACS OMEGA
卷 2, 期 11, 页码 7723-7729出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsomega.7b01313
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资金
- AFOSR [FA9550-12-1-0180]
- ONR NEPTUNE [N00014-15-1-2833]
- DTRA [HDTRA1-12-1-0025]
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-heating effect and surface temperature increase phenomenon are observed on novel top-gate ss-Ga2O3 on insulator field-effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO2/Si substrate, the temperature rise above room temperature of ss-Ga2O3 on the insulator field-effect transistor can be reduced by a factor of 3 and thereby the self-heating effect is significantly reduced. Both thermoreflectance characterization and simulation verify that the thermal resistance on the sapphire substrate is less than 1/3 of that on the SiO2/Si substrate. Therefore, maximum drain current density of 535 mA/mm is achieved on the sapphire substrate, which is 70% higher than that on the SiO2/Si substrate due to reduced self-heating. Integration of ss-Ga2O3 channel on a higher thermal conductivity substrate opens a new route to address the low thermal conductivity issue of ss-Ga(2)O3 for power electronics applications.
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