期刊
ACS NANO
卷 11, 期 12, 页码 12057-12066出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b04841
关键词
hexagonal boron nitride (h-BN); chemical vapor deposition; bilayer; trilayer; stacking; Raman; morphology
类别
资金
- Cornell Center for Materials Research
- NSF MRSEC program [DMR-1120296]
- National Science Foundation [ECCS-1542081]
Two-dimensional hexagonal boron nitride (h-BN) is a wide bandgap material which has promising mechanical and optical properties. Here we report the realization of an initial nucleation density of h-BN <1 per mm(2) using low-pressure chemical vapor deposition (CVD) on polycrystalline copper. This enabled wafer-scale CVD growth of single-crystal monolayer h-BN with a lateral size up to similar to 300 mu m, bilayer h-BN with a lateral size up to,60 mu m, and trilayer h-BN with a lateral size up to similar to 35 mu m. Based on the large single-crystal monolayer h-BN domain, the sizes of the as-grown bi- and trilayer h-BN grains are 2 orders of magnitude larger than typical h-BN multilayer domains. In addition, we achieved coalesced h-BN films with an average grain size 100 gm. Various flake morphologies and their interlayer stacking configurations of bi- and trilayer h-BN domains were studied. Raman signatures of mono- and multilayer h-BN were investigated side by side in the same film. It was found that the Raman peak intensity can be used as a marker for the number of layers.
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