期刊
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
卷 21, 期 6, 页码 312-322出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.cossms.2017.08.004
关键词
Two-dimensional materials; Oxides; Semiconductors; Band gap; Conductivity; Defects; Langmuir-Blodgett films; Heterostructures
The electronic properties of 2-dimensional metal oxide nanosheets are reviewed. Although the band structures of 2D nanosheets bear some resemblance with the band structures of the 3D parent compounds from they are derived, their 2D nature may have a profound influence on the location of the valence and conduction bands. The presence of structural defects, aliovalent dopants, and adsorbed molecules affects the mobility and concentration of charge carriers, and may even influence the band structure. The ability to transfer electrons to and from nanosheets is controlled by the charge density of the nanosheet, and/or the presence of electron donating or accepting species in the immediate vicinity. Charge transport and electron transfer in multilayer films and heterostructures are also discussed. (C) 2017 Elsevier Ltd. All rights reserved.
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