期刊
出版社
IOP PUBLISHING LTD
DOI: 10.1088/1757-899X/250/1/012015
关键词
-
资金
- National Science Foundation of China [61235006, 61421002]
Femtosecond laser etching, deep reactive ion etching and metal-catalyzed chemical etching are used to fabricate black silicon. It has been found that the light absorption is significantly enhanced in the wavelength of 400 similar to 2200nm, in which the absorption in near infrared band of black silicon etched by femtosecond laser with SF6 has the highest value. It is observed that, however, the minority carrier lifetime of crystalline silicon is shortened to some extent, which can be adjusted and controlled effectively by depositing SiNx film to passivate the surface of black silicon. Finally, a PIN photodetector is manufactured based on black silicon and a higher responsibility of 0.57 A/W at 1060 nm is obtained compared to the PIN silicon photodetector without etching process.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据