期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 107, 期 -, 页码 293-298出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2017.04.035
关键词
Hydrogen treatment; Multiple quantum wells; InGaN
资金
- National Natural Science Foundation of China [61504090, 21471111, 61604104]
- Applied Basic Research Projects of Shanxi Province [2016021028]
- National Key R&D Program of China [2016YFB0401803]
- Shanxi Provincial Key Innovative Research Team in Science and Technology [201605D131045-10]
To enhance the quality of InGaN/GaN multiple quantum wells (MQWs), a small hydrogen flow is introduced to treat the upper well/barrier interface. High-resolution X-ray diffraction results indicate that hydrogen treatment improves the interface quality of MQWs. Room temperature photoluminescence (PL) tests show that integrated PL intensity is enhanced by 57.6% and line width is narrowed, while emission peak energy is almost unchanged. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment decreases non-radiative recombination centers in active region, yet has little impact on carrier localization. Moreover, surface roughness and V-pit density are significantly reduced after hydrogen treatment as revealed by atomic force microscopy. Because the emission energy is quite stable after the hydrogen treatment, this method can also be promoted to improve the quality of green and yellow-green emission MQWs. (C) 2017 Elsevier Ltd. All rights reserved.
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