期刊
2D MATERIALS
卷 4, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aa5b0f
关键词
graphene; substrate; Raman spectroscopy; high quality
资金
- Helmholtz-Nanoelectronic-Facility (HNF)
- DFG [SPP-1459]
- ERC [280140]
- EU [NECT-ICT-696656]
- JSPS KAKENHI [JP26248061, JP15K21722, JP25106006]
- Grants-in-Aid for Scientific Research [25106006, 25107004, 15K21722] Funding Source: KAKEN
We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.
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