Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications

In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate InAIN/AIN/GaN HEMT with AIGaN back-barrier. The device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The device features are heavily doped (n++ GaN) source/drain regions with Si3N4 passivated device surface for reducing the contact resistances and gate capacitances of the device, which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E mode) HEMT exhibited a peak drain current density I-dmax of 2.3 (2.42) A/mm, trans conductance gm of 1.24(1.65) S/mm, current gain cut-off frequency f(t) of 262 (246) GHz, power gain cut-off frequency f(max) of 246(290) GHz and the three terminal off-state breakdown voltage V-BR of 40(38) V. The preeminent microwave characteristics with the higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power millimeter wave applications. (C) 2017 Elsevier Ltd. All rights reserved.