期刊
SUPERLATTICES AND MICROSTRUCTURES
卷 111, 期 -, 页码 960-965出版社
ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
DOI: 10.1016/j.spmi.2017.07.054
关键词
GaN cap layer; Quantum wells; Hydrogen; InGaN
资金
- National Natural Science Foundation of China [61504090, 21471111]
- Applied Basic Research Projects of Shanxi Province [2016021028]
- Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi [2017124]
- National Key RAMP
- D Program of China [2016YFB0401803]
- Shanxi Provincial Key Innovative Research Team in Science and Technology [201605D131045-10]
Two-step grown low temperature GaN cap layers (LT-cap) are employed to improve the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs). The first LT-cap layer is grown in nitrogen atmosphere, while a small hydrogen flow is added to the carrier gas during the growth of the second LT-cap layer. High-resolution X-ray diffraction results indicate that the two-step growth method can improve the interface quality of MQWs. Room temperature photoluminescence (PL) tests show about two-fold enhancement in integrated PL intensity, only 25 meV blue-shift in peak energy and almost unchanged line width. On the basis of temperature-dependent PL characteristics analysis, it is concluded that the first and the second LT-cap layer play a different role during the growth of MQWs. The first LT-cap layer acts as a protective layer, which protects quantum well from serious indium loss and interface roughening resulting from the hydrogen over-etching. The hydrogen gas employed in the second LT-cap layer is in favor of reducing defect density and indium segregation. Consequently, interface/surface and optical properties are improved by adopting the two-step growth method. (C) 2017 Elsevier Ltd. All rights reserved.
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