期刊
出版社
IEEE
关键词
Gallium Oxide; Ga2O3; switch; power; FET
In this work, we provide early insight into the combined tradespace for both power switching and RF applications afforded by the high critical, electric-field strength of beta-Ga2O3. MOSFETs formed by homoepitaxial growth of beta-Ga2O3 films doped with Sn, Si, and Ge on bulk substrates have been characterized electrically. Several key milestones have been achieved such as enhancement-mode operation > 600 V, low ohmic contact resistance < 0.2 Omega.mm, and RF power gain in the GHz regime. These results show great promise for monolithic and hybrid integration of RF amplifiers and switch technologies.
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